NEO Semiconductor Demonstrates 3D X-DRAM Proof of Concept and Gains Strategic Investment

NEO Semiconductor has announced successful proof-of-concept results for its 3D X-DRAM technology and secured a strategic investment led by Stan Shih, Founder and former Chairman and CEO of Acer, in a press release. The test chips confirmed that the technology can be produced using existing 3D NAND manufacturing processes while meeting key DRAM performance benchmarks.

The proof-of-concept was developed with National Yang Ming Chiao Tung University and fabricated and tested at the Taiwan Semiconductor Research Institute. The results showed read and write latency below 10 nanoseconds, data retention exceeding one second at 85°C, and endurance above 10¹⁴ cycles. These findings validate the manufacturability and electrical reliability of the architecture using mature semiconductor infrastructure.

The investment will fund further development, including multi-layer test chip design and collaborations with global memory companies. NEO Semiconductor plans to advance 3D X-DRAM toward commercialization as a scalable solution for high-density memory in AI and data-centric computing systems.

NEO's CEO Andy Hsu is scheduled to present detailed results at the Future of Memory and Storage conference in Santa Clara, California, in August 2026.