SK hynix Introduces High NA EUV System for DRAM Production

September 03, 2025
SK hynix has assembled the industry's first High NA EUV lithography system for mass production at its M16 fab in South Korea, announced in a press release.

SK hynix has assembled the industry's first High NA EUV lithography system for mass production at its M16 fabrication plant in Icheon, South Korea, announced in a press release. This system, developed in collaboration with ASML, is expected to significantly enhance the precision and density of DRAM production.

The TWINSCAN EXE:5200B, the first model for volume production in ASML's High NA EUV product line, allows for the printing of transistors 1.7 times smaller and achieves transistor densities 2.9 times higher than existing EUV systems. This advancement is achieved with a 40% improvement in numerical aperture (NA), increasing from 0.33 to 0.55.

SK hynix plans to leverage this new system to simplify its existing EUV processes and accelerate the development of next-generation memory products. The company aims to strengthen its position in the high-value memory product market and enhance its technological leadership in the AI memory space.

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