DB HiTek Advances 650V GaN HEMT Process for AI Data Centers

DB HiTek is in the final stages of developing its 650V E-Mode GaN HEMT process, a next-generation power semiconductor platform, announced in a press release. This process is designed to enhance power efficiency and miniaturization for applications such as AI data centers, robotics, and EV charging infrastructure.

The company plans to offer a dedicated GaN multi-project wafer (MPW) program by the end of October. GaN-based semiconductors are known for their superior performance under high-voltage, high-frequency, and high-temperature conditions compared to traditional silicon-based devices.

Following the completion of the 650V GaN HEMT process, DB HiTek aims to introduce a 200V GaN process and a 650V GaN process optimized for integrated circuit (IC) integration by the end of 2026. To support these initiatives, the company is expanding its cleanroom facilities in Chungcheongbuk-do, South Korea, increasing its total monthly wafer capacity by 23%.