DB HiTek Advances 650V GaN HEMT Process for AI Data Centers

September 11, 2025
DB HiTek is finalizing its 650V GaN HEMT process, enhancing power efficiency for AI data centers and other applications, as announced in a press release.

DB HiTek is in the final stages of developing its 650V E-Mode GaN HEMT process, a next-generation power semiconductor platform, announced in a press release. This process is designed to enhance power efficiency and miniaturization for applications such as AI data centers, robotics, and EV charging infrastructure.

The company plans to offer a dedicated GaN multi-project wafer (MPW) program by the end of October. GaN-based semiconductors are known for their superior performance under high-voltage, high-frequency, and high-temperature conditions compared to traditional silicon-based devices.

Following the completion of the 650V GaN HEMT process, DB HiTek aims to introduce a 200V GaN process and a 650V GaN process optimized for integrated circuit (IC) integration by the end of 2026. To support these initiatives, the company is expanding its cleanroom facilities in Chungcheongbuk-do, South Korea, increasing its total monthly wafer capacity by 23%.

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