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SK hynix and SanDisk Unveil High Bandwidth Flash Specifications
August 04, 2026
SK hynix and SanDisk have unveiled the first standard specifications for High Bandwidth Flash, a NAND based memory layer intended to sit between HBM and SSDs for AI systems.
SK hynix and SanDisk have unveiled the first standard specifications for High Bandwidth Flash, or HBF, announced in a press release. The announcement is tied to FMS 2026, held at the Santa Clara Convention Center from August 4 to 6.
HBF is a memory layer between HBM and SSDs. The specification covers capacities up to 512GB using 8 high and 16 high NAND die stacks, with bandwidth grades ranging from about 0.4 TB/s to 3.0 TB/s.
The standard uses the UCIe interface to connect HBF with processors, including GPUs and CPUs. It also covers connection interfaces, electrical characteristics, reliability, packaging guidance for die stacking, and software I/O guidance.
The specification was disclosed through the Open Compute Project Foundation. Google and Tenstorrent are participating in the HBF consortium.
SK hynix will also show its tenth generation V10 375 layer 4D NAND wafer and products at FMS 2026. The company says the NAND improves performance per watt by 2.5 times compared with the previous generation, and plans to begin mass production of high performance, high capacity eSSDs based on it early next year.
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