ROHM Supports NVIDIA's 800V Architecture with Advanced Power Solutions

ROHM Semiconductor is playing a crucial role in the development of NVIDIA's new 800V High Voltage Direct Current (HVDC) architecture, announced in a press release. This collaboration aims to revolutionize data center design by enabling more efficient, scalable, and sustainable AI factories.

ROHM's power device portfolio, which includes silicon carbide (SiC) and gallium nitride (GaN) technologies, offers strategic solutions for data center designers. Their silicon MOSFETs, widely used in automotive and industrial sectors, are now being adapted for AI infrastructure, providing cost-effective and reliable power conversion solutions.

A notable product is the RY7P250BM, a 100V power MOSFET designed for hot-swap circuits in 48V power systems, essential for AI servers. This component features best-in-class Safe Operating Area (SOA) performance and ultra-low ON resistance, reducing power loss and improving system reliability.

ROHM's SiC MOSFETs are particularly suited for high-voltage, high-power environments, aligning with NVIDIA's plans to deploy its 800V HVDC architecture. These devices offer higher efficiency, reduced switching and conduction losses, and greater thermal stability, making them ideal for the new infrastructure's requirements.