SK hynix Ships Samples of 12-Layer HBM4E Memory for AI

June 18, 2026
SK hynix has shipped samples of its new 12-layer HBM4E DRAM to major customers, featuring improved speed, power efficiency, and heat resistance for AI data centers and high-performance computing.
SK hynix Ships Samples of 12-Layer HBM4E Memory for AI

SK hynix announced in a press release that it has shipped samples of its new HBM4E DRAM to major customers. The 12-layer product is designed for AI applications and offers a maximum data processing speed of 16Gbps per pin with more than 20 percent improved power efficiency compared to previous models.

The HBM4E memory uses Advanced MR-MUF1 technology to achieve a 48GB capacity while maintaining structural stability. SK hynix reported that the new design improves heat resistance by 17 percent compared to HBM4, enabling reliable performance in high-bandwidth environments.

The company stated that the memory reduces latency through an optimized interface and design, supporting efficient data processing for AI data centers and large-scale computing systems. SK hynix plans to collaborate with partners to prepare for mass production of HBM4E.

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