Navitas to Showcase GaN and SiC Innovations at APEC 2025

Navitas Semiconductor is set to unveil significant advancements in gallium nitride (GaN) and silicon carbide (SiC) technologies at the APEC 2025 event, announced in a press release. The event will take place from March 16th to 20th at the Georgia World Congress Center in Atlanta.

Navitas plans to highlight its latest breakthroughs in power conversion, including the world's first 8.5 kW AI data center power supply, which achieves 98% efficiency. This solution features high-power GaNSafe power ICs and Gen-3 Fast SiC MOSFETs, designed to enhance efficiency and performance in AI and hyperscale data centers.

Additionally, Navitas will showcase the world's highest power density AI power supply, delivering 4.5 kW in a compact form factor with over 97% efficiency. The company's 'IntelliWeave' patented digital control technology will also be presented, offering peak efficiencies of 99.3% and reducing power losses by 30% compared to existing solutions.

Navitas will further demonstrate its GaNSlim power ICs and automotive-qualified Gen-3 Fast SiC MOSFETs, targeting applications in mobile devices, EVs, and AI-based robotics. These innovations aim to support high-frequency, high-efficiency, and high-power density power conversion systems.